When compared to the first generation chip, the new Samsung 8Gb RAM is around 15% energy efficient and 10% faster. The DRAM chip is capable of running at 3,600 Mbps while the previous generation delivered a maximum of 3,200 Mbps. The overall productivity gain is around 30% over the 1st gen which would allow the company to manufacture the memory chips quickly.
The new RAM hasn’t seen any changes the fabrication process but Samsung has managed to reduce the size by adding new technologies including “a unique air spacer” and better error checking mechanism.
The company is trying to make their 2nd-gen 10nm memory widespread, but they will also create more 1st-gen 10nm chips to meet industry demands. Their next big development after this would the RAM chips based on the 8nm LPP fabrication process. Also, Samsung is focusing on other memory technologies like DDR5, LPDDR5, GDDR6, and HBM3 which find their use in a number of mobile devices, high-end GPUs, HPC systems, etc.